Bit frequency modulation accuracy tops 99% (based on 300-bit sample).
Laser power adjustable from 0 to 2.5W with rock-solid stability – RMS under 1% over 10 hours.
Annealing target zone hits ultra-high positioning accuracy down to the hundred-nanometer scale.
Full automated control with one-click multi-point annealing. Super user-friendly interface.
Micron-scale laser spot with custom-tailorable shape and size.
| Performance Specs | |
| Annealing Repeatability | Resistance modulation accuracy over 99% (tested on 300-bit sample) |
| Laser Wavelength | 532 nm |
| Output Power | Adjustable from 0–2.5W in 0.01W steps |
| Power Stability | RMS ≤ 1% over 10 hours — rock solid |
| Beam Spot | 20μm ±2μm (effective annealing area). Custom shapes/sizes available |
| Annealing Time Control | Minimum pulse width – 80ms |
| Compatible Wafer Size | Atmospheric: up to 8-inch/Vacuum/Inert Gas: up to 2-inch/Custom sizes and shapes available on request |
| Wafer Positioning Accuracy | ±0.25μm on X/Y axes — spot-on |
| Other Specs | |
| Power | 208–230 V, 50/60 Hz, 4KW — standard stuff |
| Dimensions | 1400mm x 1400mm x 1800mm (LxWxH) |
| Operating Temp | 18–30°C (runs best in climate-controlled labs) |
| Relative Humidity | Under 65% — no sweat |
| High-Vacuum Annealing Chamber | |
 | |
| Delivers a high-vacuum annealing environment that prevents contamination from airborne impurities during laser processing | Base Vacuum Level: 1×10⁻⁴ Pa (even higher vacuum levels available if needed) |
| Inert Gas Annealing Chamber | |
 | |
| Provides an inert gas annealing environment to keep the process clean from atmospheric contaminants | Supported Gases: High-purity nitrogen, argon, neon, and others.Max Operating Pressure: 40 psi |